Advanced Ion Beam Thin Film Thickness Trimming for Photonic Integrated Circuit (PICs) Wafers
Photonic Integrated Circuits (PICs) represent a transformative technology that will revolutionize a wide range of industries, including telecommunications, computing, healthcare, and sensing. As the demand for faster, more efficient, and scalable technologies continues to grow, PICs are emerging as a key enabler of next-generation systems. Despite their numerous advantages, PICs face several difficulties. Developing suitable manufacturing processes for the mass production of PICs remains challenging.
Ion beam surface processing with nanometer and sub-nanometer precision is a powerful technology in the process chain for current and future electronic components. It enables the processing of a wide range of materials typical of PICs, including thin films with different optical properties, for various applications without exception.
This application note demonstrates the application of ion beam technology for thickness trimming of Silicon Nitride (Si3N4) and Lithium Niobate (LiNbO3) thin films.

Pre and post thickness data for Si3N4 shows the improvement of thickness standard deviation by factor of ~ 16 using ion beam trimming.

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Related Information
Related Product - scia Trim 200 & scia Trim 300
- System operates all standard wafer sizes from 100 mm to 300 mm dia.
- Film thickness uniformity to 0.1 nm
- Electrostatic chuck for no edge exclusion and low contamination
- Processing of dielectric and metal films
- Significant yield improvement
- High volume production system availabe in cluster layout
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09116 Chemnitz
Germany