Precise Surface Correction

The scia Trim 200 is used for high precision surface trimming of wafers, without limitations in film and wafer materials. Designed for high-volume production the system has a throughput and maintenance optimized layout with a semiconductor cassette handling robot that accommodates all standard wafer sizes. In addition, a cluster configuration with two process chambers and two cassette load locks is available.

Features & Benefits

  • Significant yield improvement
  • Film thickness homogeneity to be adjusted down to atom level of 0.1 nm
  • No edge exclusion with electrostatic chuck
  • Sub-nanometer removal with zero base etch function
  • Processing of film and wafer materials without restrictions
  • Throughput and maintenance optimized design for low production costs
  • Processing of wafers with photoresist masks due to good wafer cooling


Results IBT

  • Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters
  • Thickness trimming of silicon on insulator (SOI), quartz, lithium tantalate (LT) or lithium niobate (LN) wafers
  • Film thickness error or step height correction in thin film head (TFH) manufacturing
  • Dimensional correction of MEMS structures
  • Form error correction for X-ray mirrors

Application Notes


  • Focused broad ion beam scans across wafer surface in vertical setup for low contamination
  • Local material removal is controlled by adjusting the dwell time


Ion Beam Trimming (IBT) is where a focused broad ion beam scans across the wafer and the local material removal is controlled by adjusting the dwell time.

Ion Beam Figuring (IBF) is a polishing error correction by a scanning ion beam and dwell time control.

Technical Data

Substrate size (up to)

200 mm dia., all standard wafer sizes possible

Substrate holder

Water-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion

Axes performance

Max. velocity 0.5 m/s, max. acceleration 15 m/s²

Ion beam source

37 mm circular RF source (RF37-i) with 7 ...15 mm (FWHM) or
80 mm circular RF source (RF80-i) with 12 ... 20 mm (FWHM)


Hot filament neutralizer (N-Fil) or RF plasma bridge neutralizer (N-RF)

Typical removal rate

SiO2: 6 x 10-3 mm3/s (RF37-i), 11 x 10-3 mm3/s (RF80-i)

Film variation after trimming

< 0.5 nm RMS (dependent on input quality)


15 Wafer/h (50 nm Si on 150 mm wafer)

Base pressure

< 1 x 10-6 mbar

System dimensions (W x D x H)

2.80 m x 1.40 m x 2.20 m, for single chamber with cassette handling (without electrical rack and pumps)


Single chamber with single substrate load lock or cassette handling, Cluster system with 2 process chambers and cassette handling

Software interfaces



PDF Download

Product Flyer scia Trim 200


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Please contact us for further information.


Other Ion Beam Etching Systems

scia Mill 150

for full surface etching of
substrates up to 150 mm

scia Mill 200

for full surface etching of
wafers up to 200 mm

scia Finish 1500

for polishing error correction on
substrates up to 1500 mm