Full Surface Ion Beam Etching on 200 mm Wafers

The scia Mill 200 is designed for structuring of complex multilayers of various materials. For an exact process control different end point detection systems can be equipped. With its fully reactive gas compatibility the system enables reactive etching processes with enhanced selectivity and rate. The flexible design of the scia Mill 200 allows to adapt it as single substrate version as well as in high volume production cluster layout with up to three process chambers and two cassette load locks. 

Features & Benefits

  • Etching angle adjustment with tiltable and rotatable substrate holder
  • Excellent uniformity without shaper
  • Enhanced selectivity and rate with reactive gases
  • Process control with exact SIMS based or optical end point detection
  • Processing of wafers with photoresist masks due to good wafer cooling
  • Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication

Applications

Etching of a layer stack for a spintronic sensor using SIMS spectrometry, allows to determine the layer change boundaries, thereby changing points for angle and etch stops can precisely be defined. Left: Layer stack. Right: SIMS material detection.

  • Structuring of magnetic memory (MRAM) and sensors (GMR, TMR)
  • Milling of metals in MEMS production (Au, Ru, Ta, …)
  • Milling of multilayers of different metal and dielectric materials
  • Chemically Assisted Ion Beam Etching (CAIBE) of compound semiconductors (GaAs, GaN, InP, …)
  • Production of 3-dimensional optoelectronic microstructures
  • Ion beam smoothing for reduction of microroughness
  • Reactive Ion Beam Etching (RIBE) for pattern transfer for optical gratings (SiO2)
     

Application Notes

Principle

  • Circular ion beam source etches full substrate area under a defined angle with inert or reactive gases
     

Technologies

Ion Beam Etching (IBE) / Ion Beam Milling (IBM)
uses a collimated beam of inert gas ions for structuring or material removal.

Reactive Ion Beam Etching (RIBE)
introduces reactive gas into the ion beam source for reactive etching of the surface.

Chemically Assisted Ion Beam Etching (CAIBE)
uses reactive gas independent of the ion beam for reactive etching of the surface.

Ion beam Etching (IBE)

Reactive ion beam etching

Chemically Assisted Ion Beam Etching (CAIBE)

Detailed Information

Technical Data
Process Results

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Product Flyer scia Mill 200

 

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Product Overview

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Other Ion Beam Etching Systems

scia Mill 150

for full surface etching of substrates up to 150 mm

scia Mill 300

scia Mill 300

for full surface etching of wafers up to 300 mm

scia Trim 200

for precise surface correction
of wafers up to 200 mm