Substrate size (up to) | 200 mm dia. |
Substrate holder | Water-cooled, helium backside cooling contact, substrate rotation 5 to 20 rpm, tiltable in-situ from 0° to 170° in 0.1° steps |
Ion beam source | 350 mm circular RF source (RF350-e) |
Neutralizer | RF plasma bridge neutralizer (N-RF) |
Throughput | 12 Wafer/h (100 nm SiO2 on 200 mm wafer) |
Base pressure | < 5 x 10-7 mbar |
System dimension (W x D x H) | 3.20 m x 2.50 m x 2.50 m, for 3 chambers and cassette handling (without electrical racks and pumps) |
Configurations | Single chamber, optional single substrate load lock or cassette handling, Cluster system with up to 3 process chambers and cassette handling, optional OES or SIMS based end point detection |
Software interfaces | SECS II / GEM, OPC |