Full Surface Etching with scia Mill 300

Structuring of Complex Multilayers on 300 mm Wafers

The scia Mill 300 is designed for ion beam etching of various substrate materials with up to 300 mm dia. Different end point detection systems allow accurate process control, and the system's full reactive gas compatibility enables reactive etch processes with improved selectivity and rate. Due to the flexible design of the scia Mill 300, the system can be used both for high-volume production with cassette loading as well as for small scale production with a single substrate load-lock.

Features & Benefits

  • Etching angle adjustment with tiltable and rotatable substrate holder
  • Excellent uniformity without shaper
  • Enhanced selectivity and rate with reactive gases
  • Process control with exact SIMS based or optical end point detection
  • Processing of wafers with photoresist masks due to good wafer cooling
  • Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication
scia Mill 300

Applications

surface relief gratings

Reactive ion beam etching of surface relief gratings as optical couplers for Augmented Reality (AR). Left: Ion beam etching under

different angles of incidence. Right: Etched quartz grating from principle and SEM result.

  • Structuring of magnetic memory (MRAM) and sensors (IR, GMR, TMR)
  • Milling of metals in MEMS production (Au, Ru, Ta, …)
  • Milling of multilayers from diversified metal and dielectric materials
  • RIBE or CAIBE of compound semiconductors (GaAs, GaN, InP, …)
  • Production of 3-dimensional optoelectronic microstructures
  • Ion beam smoothing for reduction of microroughness
  • Pattern transfer for optical gratings
     

Application Notes

Principle

  • Circular ion beam source etches full substrate area under a defined angle with inert or reactive gases
     

Technologies

Ion Beam Etching (IBE) / Ion Beam Milling (IBM)
uses a collimated beam of inert gas ions for structuring or material removal.

Reactive Ion Beam Etching (RIBE)
introduces reactive gas into the ion beam source for reactive etching of the surface.

Chemically Assisted Ion Beam Etching (CAIBE)
uses reactive gas independent of the ion beam for reactive etching of the surface.

Ion beam Etching (IBE)

Reactive ion beam etching

Chemically Assisted Ion Beam Etching (CAIBE)

Detailed Information

Technical Data
Process Results

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Product Flyer scia Mill 300

 

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Other Ion Beam Etching Systems

scia Mill 150

for full surface etching of
substrates up to 150 mm

scia Mill 200

for full surface etching of
wafers up to 200 mm

scia Trim 300

for large area surface correction of wafers up to 300 mm