Large Area Coating and Etching over 750 mm x 750 mm

The scia Cube 750 is designed for large area high density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition, etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.

Features & Benefits

  • Large area processing with an array of synchronized linear microwave sources
  • Independent RF bias at substrate holder for energetic substrate bombardment
  • Substrate face-down orientation for minimized particle load
  • Substrate cooling (-10 °C)
  • In-situ chamber cleaning process
  • Full automation with vacuum load lock and atmosphere stocker system available


  • PECVD Processes
    • Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO2, Si3N4, …)
    • Optical and scratch resistant coatings (a-C:H, DLC)
  • RIE Processes
    • Reactive etching and structuring of metals (Ni, Cr, Pt, …)
    • Etching of gratings and other structures in optical materials (quartz, fused silica)
    • Ashing of photoresist

Application Note


  • Plasma of reactive gases is created by microwave sources
  • Enhanced ion bombardment with RF bias


Plasma Enhanced Chemical Vapor Deposition (PECVD) is a plasma assisted reactive process to deposit thin films from a gas state (vapor) into a solid state on a substrate.

Reactive Ion Etching (RIE) uses reactive gases and ion bombardment for physically and chemically etching of the substrate surface.

Detailled Information

Technical Data
Process Results

PDF Download

Product Flyer scia Cube 750


Reach out

Please contact us for further information.

Product Overview

Download our brochure as PDF.

More PECVD/RIE Systems

scia Batch 350

for 3D - coatings in batches

scia Cube 300

for large area coating and etching over 300 mm x 200 mm