Substrate size (up to) | 750 mm x 750 mm |
Substrate holder | Water-cooled, RF bias |
Substrate temperature | Alternatively cryo-cooling down to -10 °C |
Plasma source | 7 linear microwave source (PL1300) and/or |
Power supply | MW power: max. 48 kW, RF power: max. 3 kW |
Base pressure | < 1 x 10-6 mbar |
System dimension (W x D x H) | 3.70 m x 2.50 m x 2.00 m (without electrical rack and pumps) |
Configurations | Single chamber with single substrate load lock, optional atmospheric loading system with substrate stocking |
Software interfaces | SECS II / GEM, OPC |
Large Area Coating and Etching over 750 mm x 750 mm
The scia Cube 750 is designed for large area high density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition, etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.
Features & Benefits
- Large area processing with an array of synchronized linear microwave sources
- Independent RF bias at substrate holder for energetic substrate bombardment
- Substrate face-down orientation for minimized particle load
- Substrate cooling (-10 °C)
- In-situ chamber cleaning process
- Full automation with vacuum load lock and atmosphere stocker system available
Applications
SEM picture of structured computer generated hologram (CGH) on a quartz sample with courtesy of IMS Stuttgart.
- PECVD Processes
- Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO2, Si3N4, …)
- Optical and scratch resistant coatings (a-C:H, DLC)
- RIE Processes
- Reactive etching and structuring of metals (Ni, Cr, Pt, …)
- Etching of gratings and other structures in optical materials (quartz, fused silica)
- Ashing of photoresist
Application Note
- Deposition of DLC for glass compression molds
Principle
- Plasma of reactive gases is created by microwave sources
- Enhanced ion bombardment with RF bias
Technologies
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a plasma assisted reactive process to deposit thin films from a gas state (vapor) into a solid state on a substrate.
Reactive Ion Etching (RIE) uses reactive gases and ion bombardment for physically and chemically etching of the substrate surface.
Detailled Information
Technical Data
Process Results
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Please contact us for further information.
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