Large Area Coating and Etching over 300 mm x 200 mm

The scia Cube 300 is designed for large area high-density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition, etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.

Features & Benefits

Large area processing with an array of synchronized linear microwave sources
Independent RF bias at substrate holder for energetic substrate bombardment
Substrate cooling (-10 °C) or heating (850 °C)
In-situ chamber cleaning process

Need more Information? Contact us!

Applications

SEM image of grown synthesized boron doped diamond (BDD) layers with courtesy of STU Bratislava . Processing at very low temperature (390 °C). Growth rate of high-quality BDD up to 70 nm/h.

PECVD Processes
- Deposition of dielectric films, e.g. encapsulation, barrier coatings, electric insulation (SiO₂, Si₃N₄, …)
- Optical and scratch resistant coatings (a-C:H, DLC)
- Growing of nano-crystalline diamond and carbon nanotubes
RIE Processes
- Reactive etching and structuring of metals (Ni, Cr, Pt, …)
- Etching of gratings and other structures in optical materials (quartz, fused silica)
- Ashing of photoresist

Application Note

Deposition of DLC for glass compression molds

Principle

Plasma of reactive gases is created by microwave sources
Enhanced ion bombardment with RF bias

Technologies

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a plasma assisted reactive process to deposit thin films from a gas state (vapor) into a solid state on a substrate.

Reactive Ion Etching (RIE) uses reactive gases and ion bombardment for physically and chemically etching of the substrate surface.

Detailled Information

Technical Data

Substrate size (up to)	300 mm x 200 mm
Substrate holder	Water-cooled, RF bias
Substrate temperature	Alternatively cryo-cooling down to -10 °C or heating up to 850 °C
Plasma sources	2 linear microwave sources (PL400) and/or RF parallel plate arrangement, 13.56 MHz
Power supply	MW power: max. 9 kW, RF power: max. 0.6 kW
Base pressure	< 1 x 10^-6 mbar
System dimension (W x D x H)	1.30 m x 1.90 m x 1.50 m (without electrical rack and pumps)
Configurations	Single chamber, optional single substrate load lock
Software interfaces	SECS II / GEM, OPC