High Quality Multilayer Deposition

The scia Coat 200 has an excellent uniformity for coatings on up to 200 mm substrates. By using ion beam sputter deposition instead of other deposition processes, smooth and defect-free films can be achieved. In-situ optical monitoring ensures excellent process stability. Additionally, the system enables handling of wafer as well as arbitrary shaped substrates.

Features & Benefits

Excellent uniformity by substrate rotation and tilt
Up to 5 water-cooled target materials on a rotational holder for in-situ change
Recipe controlled multilayer deposition with quartz crystal oscillator and/or optical thickness monitor (OTM) and test glass changer
Direct wafer handling or adaptation to variable substrate sizes with carrier handling
Equipped with a 350 mm ion beam source as assist source, also usable for ion beam etching processes

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Applications

Transmittance and reflectivity diagram of a high-reflective mirror. Deposition of quarter-wave stack consisting of tantalum(V)-oxide and silicon dioxide for high-reflective mirror @ 630 nm. Reflectivity > 99.9 % and transmittance 15-20 ppm.

Optical coatings for high- and anti-reflective layers, bandpass and notch filters
Multilayer films for magnetic sensors (GMR, TMR, spintronics)
High laser damage threshold coatings
Deposition of dielectric and metal layers
In-situ preprocessing of substrates (etching, cleaning, smoothing)

Application Note

Dielectric Coatings on large substrates
High- and Anti-Reflective Coatings with Ta₂O₅ and SiO₂

Principle

Primary source sputters material from a target to the vertical or face-down oriented substrate
Secondary source used for pre-cleaning the substrate and/or assist during deposition

Technologies

Ion Beam Sputtering (IBS) thereby material is sputtered from a target with an ion beam and is deposited on the substrate.

Dual Ion Beam Sputtering (DIBS) uses an additional assist ion beam source to influence the growing film.

Ion Beam Etching (IBE) uses a collimated beam of inert gas ions for structuring or material removal.

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Technical Data

Substrate size (up to)	200 mm dia.
Substrate holder	Water-cooled, helium backside cooling contact, substrate rotation 5 to 20 rpm, tiltable in-situ from 0° to 160° in 0.1° steps
Ion beam sources	Sputter source: 120 mm circular RF source (RF120-e) Assist source: 120 mm circular RF source (RF120-e) or 350 mm circular RF source (RF350-e) or 218 mm circular microwave ECR source (MW218-e)
Neutralizer	Filament driven (N-DC) or RF driven (N-RF) plasma bridge neutralizer
Target holder	Target drum with tiltable and water-cooled targets, up to 5 (each max. 220 mm dia.) or up to 4 (each max. 300 mm dia.)
Base pressure	< 5 x 10^-7 mbar
System dimension (W x D x H)	3.10 m x 1.70 m x 2.40 m, for single chamber with cassette handling (without electrical rack and pumps)
Configurations	Single chamber with single substrate load lock or cassette handling, Cluster system with cassette handling
Software interfaces	SECS II / GEM, OPC

Process Results

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Typical deposition rates	Ag: 35 nm/min Al: 10 nm/min Si: 15 nm/min Ti: 8 nm/min Al₂O₃: 15 nm/min SiO₂: 20 nm/min Ta₂O₅: 15 nm/min TiO₂: 6 nm/min
Uniformity variation	≤ 0.5 % (σ/mean)

High Quality Multilayer Deposition

Features & Benefits

Applications

Principle

Detailled Information

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Other Ion Beam Sputtering Systems

scia Coat 500

for large area multilayer deposition on up to 500 mm x 300 mm

scia Opto 300

for high precision optical coatings on up to 300 mm dia.