High-Quality Cleaning and Qualification up to 3 m in dia. and 3.4 m in length

The scia Clean 1000/1500/3000 systems are used for dry-cleaning of 3-dimensional shaped substrates with weights up to 14 tons. The chamber design and functionality ensures a very good base pressure and allows to quantify even small residual contaminations on the substrate by mass spectroscopy measurement.

Features & Benefits

Low base pressure and fast pumping due to electropolished and heated vacuum chamber
Separate substrate heating for improved desorption
Qualification of residual contamination by high-sensitive mass spectroscopy
Selectable quantity of plasma sources for advanced cleaning with H₂ plasma
Recipes for repeatable temperature ramps and fully automated cleaning cycles
Transfer system for loading of heavy substrates

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Applications

Ultra-high purity cleaning of X-ray optics
Cleaning of components for beam line accelerators
Outgassing qualification of complex vacuum assemblies

Principle

Removing of contaminations from 3-dimensional shaped substrates by using ultra-high vacuum (vacuum desorption)
Further cleaning progress with optional heating of substrate and/or chamber (thermal desorption) and applying plasma treatment

Technologies

Dry-Cleaning allows the removal of substrate surface contaminations in vacuum with different methods. These methods can be applied successively to optimize the cleaning results.

Detailled Information

scia Clean 1000

Substrate size (up to)	1000 mm dia., 850 mm length, 500 kg
Substrate heating	Radiation heaters (7.5 kW) up to 250 °C
Chamber heating and cooling	Pressurized wate-based heating up to 150 °C and cooling (16 kW)
Plasma sources	Up to 2 optional ICP plasma sources (PI400), max. 2.5 kW per source
Base pressure	< 5 x 10^-9 mbar
Quality control	Mass spectrometer for quantitative outgassing measurement
System dimension (W x D x H)	1.60 m x 1.80 m x 2.70 m (without electrical rack and pumps)
Configurations	Single chamber with front door, manual loading with transport wagon
Software interfaces	SECS II / GEM, OPC

scia Clean 1500

Substrate size (up to)	1500 mm dia., 1700 mm length, 2 t
Substrate heating	Radiation heaters (20 kW) up to 250 °C
Chamber heating and cooling	Pressurized water-based heating up to 150 °C and cooling (48 kW)
Plasma sources	Up to 10 optional ICP plasma sources (PI400), max. 2.5 kW per source
Base pressure	< 5 x 10^-9 mbar
Quality control	Mass spectrometer for quantitative outgassing measurement
System dimension (W x D x H)	8.00 m x 4.20 m x 3.60 m (without electrical rack and pumps)
Configurations	Single chamber with front door, loading via transfer system with transport carriers
Software interfaces	SECS II / GEM, OPC

scia Clean 3000

Substrate size (up to)	3000 mm dia., 3400 mm length, 14 t
Substrate heating	Radiation heaters (40 kW) up to 250 °C
Chamber heating and cooling	Pressurized water-based heating up to 150 °C and cooling (96 kW)
Plasma sources	Up to 12 optional ICP plasma sources (PI400), max. 2.5 kW per source
Base pressure	< 5 x 10^-9 mbar
Quality control	Mass spectrometer for quantitative outgassing measurement
System dimension (W x D x H)	15.00 m x 5.50 m x 4.80 m (with electrical rack and pumps)
Configurations	Single chamber with front door, loading via transfer system with transport carriers
Software interfaces	SECS II / GEM, OPC