Substrate size (up to) | 200 mm dia. |
Substrate holder | Water-cooled, helium backside cooling contact, substrate rotation 5 to 20 rpm, tiltable in-situ from 0° to 180° in 0.1° steps, optional heating |
E-beam evaporator | 4 to 12 pockets on a cooled crucible |
Ion beam source (optional) | 120 mm circular RF source (RF120-e) or 218 mm circular microwave ECR source (MW218-e) |
Neutralizer | Plasma bridge neutralizer (N-RF or N3-DC) |
Base pressure | < 5 x 10-7 mbar |
System dimension (W x D x H) | 1.80 m x 1.50 m x 2.40 m, for single chamber with single substrate load-lock (without electrical rack and pumps) |
Configurations | Single chamber with single substrate load-lock or cassette handling, cluster system with up to 3 process chambers |
Software interfaces | SECS II / GEM, OPC |
Glancing Angle Deposition for Precise Nanostructures
With the scia Eva 200 ultra-pure coatings can be deposited on up to 200 mm wafers by electron beam (e-beam) evaporation. The system enables up to 12 target materials in crucible-pockets and can be configured with single wafer load lock or with fully automated cassette handling. In addition, the system has a very small footprint and an ion beam source can be integrated for pre-cleaning.
Features & Benefits
- Substrate holder precisely tiltable and rotatable, defined angle of incidence adjustable
- High deposition rates for evaporation of high temperature materials and refractory metals
- Up to 12 evaporation materials in water-cooled multi pocket rotatable crucible
- Optional ion beam source for pre-cleaning
- Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication

Single chamber with single substrate load-lock
Applications
- Glancing angle deposition (GLAD) of nano-structured thin film layers for production of photo-electrodes for efficient fuel generation
- Infrared-emitters for detection and spectroscopy for gas analyzer and smart applications
- Metallization of substrates
- Dielectric coatings
- Optical coatings
Principle
Electron Beam (E-beam) Evaporation
Current through tungsten filament causes electron emission, which accelerates to an e-beam by high voltage. A magnetic field deflects the e-beam so that it is focused into the crucible. This leads to evaporation of target material and deposition on the substrate.
Detailled Information
Technical Data
Process Results
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