Large Area Coating and Etching over 750 mm x 750 mm

The scia Cube 750 is designed for large area high density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.

Features & Benefits

  • Large area processing with an array of synchronized linear microwave sources
  • Independent RF bias at substrate holder for energetic substrate bombardment
  • Substrate face-down orientation for minimized particle load
  • Substrate cooling (-10 °C)
  • In-situ chamber cleaning process
  • Full automation with vacuum load-lock and atmosphere stocker system available

Applications

  • PECVD Processes
    • Deposition of dielectric films (e.g. encapsulation, barrier coatings, electric insulation (SiO2, Si3N4, …))
    • Optical and scratch resistant coatings (a-C:H, DLC)
  • RIE Processes
    • Reactive etching and structuring of metals (Ni, Cr, Pt, …)
    • Etching of gratings and other structures in optical materials (quartz, fused silica)
    • Ashing of photoresist

Principle

Technical Data

Substrate size (up to)

750 mm x 750 mm

Substrate holder

Water cooled, RF bias

Substrate temperature

Alternatively cryo cooling down to -10 °C

Plasma source

7 linear microwave source (PL1300) and/or
RF parallel plate arrangement, 13.56 MHz

Typical etch rates

Metals: > 5 nm/min, SiO2: > 30 nm/min

Power supply

MW-power: max. 48 kW, RF-power: max. 3 kW

Base pressure

< 1 x 10-6 mbar

System dimension (W x D x H)

3.70 m x 2.50 m x 2.00 m (without electrical rack and pumps)

Configurations

Single chamber with single substrate load-lock, optional atmospheric loading system with substrate stocking

Software interfaces

SECS II / GEM, OPC

More PECVD/RIE Systems

scia Batch 350

for 3D - coatings in batches

scia Cube 300

for large area coating and etching
over 300 mm x 200 mm