Large Area Coating and Etching over 300 mm x 200 mm

The scia Cube 300 is designed for large area high density plasma processes. The system enables deposition with high rates and a wide range of deposition parameters. In addition etching processes with oxygen or halogen chemistry for high anisotropic etching and/or optimized selectivity are possible.

Features & Benefits

  • Large area processing with an array of synchronized linear microwave sources
  • Independent RF bias at substrate holder for energetic substrate bombardment
  • Substrate cooling (-10 °C) or heating (850 °C)
  • In-situ chamber cleaning process

Applications

  • PECVD Processes
    • Deposition of dielectric films (e.g. encapsulation, barrier coatings, electric insulation (SiO2, Si3N4, …))
    • Optical and scratch resistant coatings (a-C:H, DLC)
    • Growing of nano-crystalline diamond and carbon nanotubes
  • RIE Processes
    • Reactive etching and structuring of metals (Ni, Cr, Pt, …)
    • Etching of gratings and other structures in optical materials (quartz, fused silica)
    • Ashing of photoresist

Principle

Technical Data

Substrate size (up to)

300 mm x 200 mm

Substrate holder

Water cooled, RF bias

Substrate temperature

Alternatively cryo cooling down to -10 °C or heating up to 850 °C

Plasma sources

2 linear microwave sources (PL400) and/or
RF parallel plate arrangement, 13.56 MHz

Typical deposition rates

Diamond: 30 … 70 nm/h, DLC: 7.5 nm/min

Power supply

MW-power: max. 9 kW, RF-power: max. 0.6 kW

Base pressure

< 1 x 10-6 mbar

System dimension (W x D x H)

1.30 m x 1.90 m x 1.50 m (without electrical rack and pumps)

Configurations

Single chamber, optional single substrate load-lock

Software interfaces

SECS II / GEM, OPC

More PECVD/RIE Systems

scia Batch 350

for 3D - coatings in batches

scia Cube 750

for large area coating and etching
over 750 mm x 750 mm