Advanced Wafer Coatings
The scia Magna 200 is used for precision wafer coatings by deposition of metals and/or dielectric layers. With its selectable sputter modes and arrangements the system can be configured according the customer requirements. In addition, the system is suitable for small scale R&D applications as well as for mass production, in cluster layout with software controlled automatic production.
Features & Benefits
- RF bias for conformity and stress control
- Superior uniformity with rotatable substrate holder
- Low substrate temperature with helium cooling contact and electrostatic chuck
- High deposition rates with reactive sputtering in unipolar and bipolar mode
- Variation of film properties by adjustable energetic substrate bombardment
- Co-sputtering with confocal arrangement of magnetrons
Applications
- Temperature compensation films for TC-SAW devices (SiO2)
- Piezoelectric films with excellent and defined crystal orientation (AlN)
- Optical high- and low- refractive coatings (SiO2, TiO2, HfO2, ZrO2, Nb2O5 , Ta2O5)
- Electrical insulating films (Si3N4, SiO2, Al2O3)
- Co-sputtering of metals and alloys
Application Note
- Temperature Compensation for surface acoustic wave wafers (TC-SAW)
Principle
- Magnetron Sputtering in several configurations:
- Single magnetron with rotating magnetic field, magnetron dia. > substrate dia. (see video) or
- Up to 4 magnetrons in confocal arrangement, magnetron dia. < substrate dia. (rotation required) or
- DRM 400 from Fraunhofer FEP with two concentric targets, magnetron dia. > substrate dia.
Technologies
Magnetron Sputtering utilizes plasma ion bombardment on a target to deposit thin films on the substrate surface.
Technical Data
Substrate size (up to) | 200 mm dia. | |
Substrate holder | Water-cooled, helium backside cooling contact, rotation up to 20 rpm, optional RF bias, electrostatic clamping and wafer heating (up to 750 °C) | |
Sputter sources | Substrates ≤ 150 mm Substrates up to 200 mm | |
Sputter modes | Substrates ≤ 150 mm Substrates up to 200 mm | |
Typical deposition rates | SiO2: 90 nm/min (single), 7 nm/min (confocal), 180 nm/min (DRM 400) | |
Uniformity variation | ≤ 1.5 %* (single), ≤ 0.8 %* (confocal), ≤ 0.5 %* (DRM 400) *(σ/mean) | |
Base pressure | < 1 x 10-6 mbar | |
System dimensions (W x D x H) | 2.70 m x 1.10 m x 1.60 m, for single chamber with cassette handling (without electrical rack and pumps) | |
Configurations | Single chamber with single substrate load lock or cassette handling, Cluster system with up to 5 process chambers and cassette handling | |
Software interfaces | SECS II / GEM, OPC |