Advanced Wafer Coatings

The scia Magna 200 is used for precision wafer coatings by deposition of metals and/or dielectric layers. With its selectable sputter modes and arrangements the system can be configured according the customer requirements. In addition, the system is suitable for small scale R&D applications as well as for mass production, in cluster layout with software controlled automatic production.

Features & Benefits

RF bias for conformity and stress control
Superior uniformity with rotatable substrate holder
Low substrate temperature with helium cooling contact and electrostatic chuck
High deposition rates with reactive sputtering in unipolar and bipolar mode
Variation of film properties by adjustable energetic substrate bombardment
Co-sputtering with confocal arrangement of magnetrons

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Applications

Reactive sputter deposition of silicon dioxide in confocal arrangement with bipolar pulsed DC on a 150 mm dia. Si wafer. Uniformity variation < 0.8 % (σ/mean), stress -300 MPa, deposition rate 7 nm/min. Refractive index of 1.48 indicates stoichiometric and dense silicon dioxide deposition.

Temperature compensation films for TC-SAW devices (SiO₂)
Piezoelectric films with excellent and defined crystal orientation (AlN)
Optical high- and low- refractive coatings (SiO₂, TiO₂, HfO₂, ZrO₂, Nb₂O₅, Ta₂O₅)
Electrical insulating films (Si₃N₄, SiO₂, Al₂O₃)
Co-sputtering of metals and alloys

Application Note

Temperature Compensation for surface acoustic wave wafers (TC-SAW)

Principle

Magnetron Sputtering in several configurations:
- Single magnetron with rotating magnetic field, magnetron dia. > substrate dia. (see video) or
- Up to 4 magnetrons in confocal arrangement, magnetron dia. < substrate dia. (rotation required) or
- DRM 400 from Fraunhofer FEP with two concentric targets, magnetron dia. > substrate dia.

Technologies

Magnetron Sputtering utilizes plasma ion bombardment on a target to deposit thin films on the substrate surface.

Technical Data

Substrate size (up to)	200 mm dia.
Substrate holder	Water-cooled, helium backside cooling contact, rotation up to 20 rpm, optional RF bias, electrostatic clamping and wafer heating (up to 750 °C)
Sputter sources	Substrates ≤ 150 mm 250 mm magnetron with rotating magnetic field or up to 4 magnetrons (125 mm dia.) in confocal arrangement Substrates up to 200 mm 300 mm magnetron with rotating magnetic field or Double Ring Magnetron (DRM 400) from Fraunhofer FEP
Sputter modes	Substrates ≤ 150 mm DC in uni- or bipolar pulse mode (up to 10 kW) and/or RF (up to 3 kW, 13.56 MHz) Substrates up to 200 mm DC in uni- or bipolar pulse mode (up to 2 x 10 kW) and/or RF (up to 6 kW, 13.56 MHz)
Typical deposition rates	SiO₂: 90 nm/min (single), 7 nm/min (confocal), 180 nm/min (DRM 400)
Uniformity variation	≤ 1.5 %^* (single), ≤ 0.8 %^* (confocal), ≤ 0.5 %^* (DRM 400) ^*(σ/mean)
Base pressure	< 1 x 10^-6 mbar
System dimensions (W x D x H)	2.70 m x 1.10 m x 1.60 m, for single chamber with cassette handling (without electrical rack and pumps)
Configurations	Single chamber with single substrate load lock or cassette handling, Cluster system with up to 5 process chambers and cassette handling
Software interfaces	SECS II / GEM, OPC