Precision in Optical Coating

The scia Opto 300 is used for homogeneous coating of precision optics. With up to 6 targets for flexible multilayer deposition, even a mixing of target materials is possible. Two loading positions allow continuous and fully automatic processing of the substrates. Optical in-situ monitoring with fully integrated test glass changer ensures highest precision and optimized uniformity of coating.

Features & Benefits

Variable substrate sizes up to 300 mm dia.
Automatic loading with two loading positions for continuous processing
Up to 6 target materials on a rotational holder, each target up to 300 mm x 300 mm, with optimized geometry for mixed layers or smooth transition between layers
Excellent process uniformity by substrate rotation with up to 60 rpm
In-situ optical thickness monitor (OTM) and test glass changer
Optimized geometry for coating with low stress

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Applications

Application Example scia Opto 300 — Application Example: Anti-reflex coating of a multilayer stack consisting of Ta2O5 and SiO2 on TGG, designed to be transparent for typical laser lines of 633 nm and 1064 nm | picture left: structure of the layer stack | picture right: Transmission Spectra measured with transmission mode of ellipsometer. The target values of the reflectivities could be reached.

Dielectric mirror (e.g. rugate filter)
Optical coatings for high- and anti-reflective layers, bandpass and notch filters
High laser damage threshold coatings
Deposition of refractive index gradient layers
In-situ preprocessing of substrates (etching, cleaning, smoothing)
Metallic, seed and protective coatings

Principle

Primary source sputters material from a target to the facedown oriented substrate
Secondary source used for precleaning the substrate and / or assist during deposition

Technologies

Ion Beam Sputtering (IBS) thereby material is sputtered from a target with an ion beam and is deposited on the substrate.

Dual Ion Beam Sputtering (DIBS) uses an additional assist ion beam source to influence the growing film.

Technical Data

Substrate size (up to)	300 mm dia.
Substrate holder	Substrate rotation up to 60 rpm, includes optical thickness monitor (OTM) and test glass changer
Ion beam sources	Sputter source: 120 mm circular RF source (RF120-e) Assist source: 120 mm circular RF source (RF120-e)
Neutralizer	RF driven (N-RF) plasma bridge neutralizer
Target holder	Target drum with 6 water cooled targets (each up to 300 mm x 300 mm)
Typical deposition rates	Si: 6 nm/min, SiO₂: 9 nm/min, Ta₂O₅: 6 nm/min
Uniformity variation	≤ 0.8 % (σ/mean) for 300 mm
Base pressure	< 5 x 10^-8 mbar
System dimension (W x D x H)	4.60 m x 1.80 m x 2.20 m, for single chamber with double substrate load lock (without electrical rack and pumps)
Configurations	Single chamber with double substrate load lock
Software interfaces	SECS II / GEM, OPC