Precise Surface Correction by Ion Beam Trimming

The scia Trim 300 is a high-volume production system for ion beam trimming of 300 mm wafers without material restrictions. The precise local surface correction of the substrate is performed by a focused broad ion beam with a sufficient small focal point. Controlling the local material removal results in the etching of inhomogeneities up to an impressively uniform film, thus significantly increasing the yield of usable components.

Features & Benefits

  • Significant yield improvement
  • Film thickness uniformity to be adjusted down to atom level of 0.1 nm
  • No edge exclusion with electrostatic chuck
  • Sub-nanometer removal with zero base etch function
  • Processing of film and wafer materials without restrictions
  • Throughput and maintenance optimized design for low production costs
  • Processing of wafers with photoresist masks due to good wafer cooling

Applications

Results IBT

  • Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters
  • Thickness trimming of silicon on insulator (SOI), 
  • Dimensional correction of MEMS structures

Application Notes

  • BAW filters as high frequency filters in mobile communication
  • SAW-filters for the suppression of frequencies in mobile communications

Principle

  • Focused broad ion beam scans across wafer surface in vertical setup for low contamination
  • Local material removal is controlled by adjusting the dwell time
     

Technologies

Ion Beam Trimming (IBT) is where a focused broad ion beam scans across the wafer and the local material removal is controlled by adjusting the dwell time.

Ion Beam Figuring (IBF) is a polishing error correction by a scanning ion beam and dwell time control.

Technical Data

Substrate size (up to)

300 mm dia., all standard wafer sizes possible

Substrate holder

Water-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion

Axes performance

Max. velocity 0.25 m/s, max. acceleration 15 m/s²

Ion beam source

37 mm circular RF source (RF37-i) with 7 ...15 mm (FWHM) or
80 mm circular RF source (RF80-i) with 12 ... 20 mm (FWHM)

Neutralizer

Hot filament neutralizer (N-Fil) 

Typical removal rate

SiO2: 6 x 10-3 mm3/s (RF37-i), 17 x 10-3 mm3/s (RF80-i)

Film variation after trimming

< 0.5 nm RMS (dependent on input quality)

Throughput

6 Wafer/h (50 nm Si on 300 mm wafer)

Base pressure

< 1 x 10-6 mbar

System dimensions (W x D x H)

3.20 m x 2.90 m x 2.20 m, for single chamber with EFEM for 270° arrangement (without electrical rack and pumps)

Configurations

Single chamber with cassette handling or cluster system with two process chambers and cassette handling

Software interfaces

SECS II / GEM, OPC

 

PDF Download

Product Flyer scia Trim 300

 

Reach out

Please contact us for further information.

 

Other Ion Beam Etching Systems

scia Mill 150

for full surface etching of
substrates up to 150 mm

scia Mill 200

for full surface etching of
wafers up to 200 mm

scia Finish 1500

for polishing error correction on
substrates up to 1500 mm