Substrate size (up to) | 300 mm dia., all standard wafer sizes possible |
Substrate holder | Water-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion |
Axes performance | Max. velocity 0.25 m/s, max. acceleration 15 m/s² |
Ion beam source | 37 mm circular RF source (RF37-i) with 7 ...15 mm (FWHM) or |
Neutralizer | Hot filament neutralizer (N-Fil) |
Throughput | 6 Wafer/h (50 nm Si on 300 mm wafer) |
Base pressure | < 1 x 10-6 mbar |
System dimensions (W x D x H) | 3.20 m x 2.90 m x 2.20 m, for single chamber with EFEM for 270° arrangement (without electrical rack and pumps) |
Configurations | Single chamber with cassette handling or cluster system with two process chambers and cassette handling |
Software interfaces | SECS II / GEM, OPC |