Precise Surface Correction by Ion Beam Trimming

The scia Trim 300 is a high-volume production system for ion beam trimming of 300 mm wafers without material restrictions. The precise local surface correction of the substrate is performed by a focused broad ion beam with a sufficient small focal point. Controlling the local material removal results in the etching of inhomogeneities up to an impressively uniform film, thus significantly increasing the yield of usable components.

Features & Benefits

Significant yield improvement
Film thickness uniformity to be adjusted down to atom level of 0.1 nm
No edge exclusion with electrostatic chuck
Sub-nanometer removal with zero base etch function
Processing of film and wafer materials without restrictions
Throughput and maintenance optimized design for low production costs
Processing of wafers with photoresist masks due to good wafer cooling

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Applications

Results IBT

Results (left-pre, right-post) for ion beam trimming of SiO₂ on a 300 mm wafer.
Standard deviation: pre: 1.3 nm, post: 0.3 nm; Improvement factor: 4.3; Average thickness: pre: 1010.7 nm, post: 955.1 nm; Removal: 55.6 nm

Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters
Thickness trimming of silicon on insulator (SOI),
Dimensional correction of MEMS structures

Application Notes

BAW filters as high frequency filters in mobile communication
SAW-filters for the suppression of frequencies in mobile communications

Principle

Focused broad ion beam scans across wafer surface in vertical setup for low contamination
Local material removal is controlled by adjusting the dwell time

Technologies

Ion Beam Trimming (IBT) is where a focused broad ion beam scans across the wafer and the local material removal is controlled by adjusting the dwell time.

Ion Beam Figuring (IBF) is a polishing error correction by a scanning ion beam and dwell time control.

Detailed Information

Technical Data

Substrate size (up to)	300 mm dia., all standard wafer sizes possible
Substrate holder	Water-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion
Axes performance	Max. velocity 0.25 m/s, max. acceleration 15 m/s²
Ion beam source	37 mm circular RF source (RF37-i) with 7 ...15 mm (FWHM) or 80 mm circular RF source (RF80-i) with 12 ... 20 mm (FWHM)
Neutralizer	Hot filament neutralizer (N-Fil)
Throughput	6 Wafer/h (50 nm Si on 300 mm wafer)
Base pressure	< 1 x 10^-6 mbar
System dimensions (W x D x H)	3.20 m x 2.90 m x 2.20 m, for single chamber with EFEM for 270° arrangement (without electrical rack and pumps)
Configurations	Single chamber with cassette handling or cluster system with two process chambers and cassette handling
Software interfaces	SECS II / GEM, OPC

Process Results

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Product Flyer scia Trim 300

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Typical removal rate	SiO₂: 6 x 10^-3 mm³/s (RF37-i), 17 x 10^-3 mm³/s (RF80-i)
Film variation after trimming	< 0.5 nm RMS (dependent on input quality)

Precise Surface Correction by Ion Beam Trimming

Features & Benefits

Applications

Results IBT

Principle

Detailed Information

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Reach out

Other Ion Beam Etching Systems

scia Trim 200

for precise surface correction
of wafers up to 200 mm

scia Finish 1500

for polishing error correction on
substrates up to 1500 mm

scia Mill 300

for full surface etching of
wafers up to 300 mm

scia Trim 200

for precise surface correction of wafers up to 200 mm

scia Finish 1500

for polishing error correction on substrates up to 1500 mm

scia Mill 300

for full surface etching of wafers up to 300 mm

for precise surface correction
of wafers up to 200 mm

for polishing error correction on
substrates up to 1500 mm

for full surface etching of
wafers up to 300 mm