Precise Surface Correction by Ion Beam Trimming
The scia Trim 300 is a high-volume production system for ion beam trimming of 300 mm wafers without material restrictions. The precise local surface correction of the substrate is performed by a focused broad ion beam with a sufficient small focal point. Controlling the local material removal results in the etching of inhomogeneities up to an impressively uniform film, thus significantly increasing the yield of usable components.
Features & Benefits
- Significant yield improvement
- Film thickness uniformity to be adjusted down to atom level of 0.1 nm
- No edge exclusion with electrostatic chuck
- Sub-nanometer removal with zero base etch function
- Processing of film and wafer materials without restrictions
- Throughput and maintenance optimized design for low production costs
- Processing of wafers with photoresist masks due to good wafer cooling
Applications
Results IBT
Results (left-pre, right-post) for ion beam trimming of SiO2 on a 300 mm wafer.
Standard deviation: pre: 1.3 nm, post: 0.3 nm; Improvement factor: 4.3; Average thickness: pre: 1010.7 nm, post: 955.1 nm; Removal: 55.6 nm
- Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters
- Thickness trimming of silicon on insulator (SOI),
- Dimensional correction of MEMS structures
Application Notes
- BAW filters as high frequency filters in mobile communication
- SAW-filters for the suppression of frequencies in mobile communications
Principle
- Focused broad ion beam scans across wafer surface in vertical setup for low contamination
- Local material removal is controlled by adjusting the dwell time
Technologies
Ion Beam Trimming (IBT) is where a focused broad ion beam scans across the wafer and the local material removal is controlled by adjusting the dwell time.
Ion Beam Figuring (IBF) is a polishing error correction by a scanning ion beam and dwell time control.
Technical Data
Substrate size (up to) | 300 mm dia., all standard wafer sizes possible |
Substrate holder | Water-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion |
Axes performance | Max. velocity 0.25 m/s, max. acceleration 15 m/s² |
Ion beam source | 37 mm circular RF source (RF37-i) with 7 ...15 mm (FWHM) or |
Neutralizer | Hot filament neutralizer (N-Fil) |
Typical removal rate | SiO2: 6 x 10-3 mm3/s (RF37-i), 17 x 10-3 mm3/s (RF80-i) |
Film variation after trimming | < 0.5 nm RMS (dependent on input quality) |
Throughput | 6 Wafer/h (50 nm Si on 300 mm wafer) |
Base pressure | < 1 x 10-6 mbar |
System dimensions (W x D x H) | 3.20 m x 2.90 m x 2.20 m, for single chamber with EFEM for 270° arrangement (without electrical rack and pumps) |
Configurations | Single chamber with cassette handling or cluster system with two process chambers and cassette handling |
Software interfaces | SECS II / GEM, OPC |
Other Ion Beam Etching Systems
scia Mill 150
for full surface etching of
substrates up to 150 mm
scia Mill 200
for full surface etching of
wafers up to 200 mm
