Precise Surface Correction by Ion Beam Trimming
The scia Trim 300 is a high-volume production system for ion beam trimming of 300 mm wafers without material restrictions. The precise local surface correction of the substrate is performed by a focused broad ion beam with a sufficient small focal point. Controlling the local material removal results in the etching of inhomogeneities up to an impressively uniform film, thus significantly increasing the yield of usable components.
Features & Benefits
- Significant yield improvement
- Film thickness uniformity to be adjusted down to atom level of 0.1 nm
- No edge exclusion with electrostatic chuck
- Sub-nanometer removal with zero base etch function
- Processing of film and wafer materials without restrictions
- Throughput and maintenance optimized design for low production costs
- Processing of wafers with photoresist masks due to good wafer cooling
Applications
- Frequency trimming of bulk acoustic wave (BAW) or surface acoustic wave (SAW) filters
- Thickness trimming of silicon on insulator (SOI),
- Dimensional correction of MEMS structures
Application Notes
- BAW filters as high frequency filters in mobile communication
- SAW-filters for the suppression of frequencies in mobile communications
Principle
- Focused broad ion beam scans across wafer surface in vertical setup for low contamination
- Local material removal is controlled by adjusting the dwell time
Technologies
Ion Beam Trimming (IBT) is where a focused broad ion beam scans across the wafer and the local material removal is controlled by adjusting the dwell time.
Ion Beam Figuring (IBF) is a polishing error correction by a scanning ion beam and dwell time control.
Technical Data
Substrate size (up to) | 300 mm dia., all standard wafer sizes possible |
Substrate holder | Water-cooled, helium backside cooling contact, electrostatic clamping without edge exclusion |
Axes performance | Max. velocity 0.25 m/s, max. acceleration 15 m/s² |
Ion beam source | 37 mm circular RF source (RF37-i) with 7 ...15 mm (FWHM) or |
Neutralizer | Hot filament neutralizer (N-Fil) |
Typical removal rate | SiO2: 6 x 10-3 mm3/s (RF37-i), 17 x 10-3 mm3/s (RF80-i) |
Film variation after trimming | < 0.5 nm RMS (dependent on input quality) |
Throughput | 6 Wafer/h (50 nm Si on 300 mm wafer) |
Base pressure | < 1 x 10-6 mbar |
System dimensions (W x D x H) | 3.20 m x 2.90 m x 2.20 m, for single chamber with EFEM for 270° arrangement (without electrical rack and pumps) |
Configurations | Single chamber with cassette handling or cluster system with two process chambers and cassette handling |
Software interfaces | SECS II / GEM, OPC |