Polishing Error Correction for Lenses and Mirrors

The scia Finish 1500 is used for surface form error correction of high-precision optical elements. The system is suitable for high volume production with 24/7 operation due to fast pumping times and high removal rates of the ion beam source.

Features & Benefits

  • Long term stable process for repeatable quality of optical components
  • Excellent precision on large areas
  • High removal rates for high throughput
  • Easy loading of large substrates due to sliding doors
  • Designed for high volume production with short pumping down times


  • Final surface form error correction of lenses and mirrors
    • Telescope mirrors (Zerodur®, SiC, LTEM)
    • Conventional optics (quartz and other glasses)
    • Ion beam figuring of X-ray optics (Si)

Application Note


  • Focused broad ion beam scans across substrate surface in vertical setup for low contamination
  • Dwell time control to remove different amounts of material


Ion Beam Figuring (IBF) is a polishing error correction by a scanning ion beam and dwell time control.

Technical Data

Substrate size (up to)

1500 mm dia., 400 kg

Axis performance

Max. velocity 0.15 m/s, max. acceleration 15 m/s²

Ion beam source

37 mm circular RF source (RF37-i) with 7 ... 15 mm (FWHM) or
120 mm circular RF source (RF120-i) with 16 ... 36 mm (FWHM),
optional second ion beam source


RF plasma bridge neutralizer (N-RF)

Typical removal rate

SiO2: 14 mm3/h (RF37-i), 96 mm3/h (RF120-i)

Thickness variation
after IBF

< 0.5 nm RMS (dependent on input quality)

Base pressure

< 1 x 10-6 mbar

System dimensions
(W x D x H)

3.60 m x 7.70 m x 3.40 m
(without electrical rack and pumps)


Single chamber with sliding doors, manual loading with transport cart, 3- or 4-axis control system for
ion beam motion

Software interfaces



PDF Download

Product Flyer scia Finish 1500


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Please contact us for further information.


Other Ion Beam Etching Systems

scia Trim 200

for precise surface correction
of wafers up to 200 mm

scia Mill 150

for full surface etching of
substrates up to 150 mm

scia Mill 300

for full surface etching of
wafers up to 300 mm