Glancing Angle Deposition for Precise Nanostructures

With the scia Eva 200 ultra-pure coatings can be deposited on up to 200 mm wafers by electron beam (e-beam) evaporation. The system enables up to 12 target materials in crucible-pockets and can be configured with single wafer load lock or with fully automated cassette handling. In addition, the system has a very small footprint and an ion beam source can be integrated for pre-cleaning.

Features & Benefits

  • Substrate holder precisely tiltable and rotatable, defined angle of incidence adjustable
  • High deposition rates for evaporation of high temperature materials and refractory metals
  • Up to 12 evaporation materials in water-cooled multi pocket rotatable crucible
  • Optional ion beam source for pre-cleaning
  • Fully automatic cassette handling in variable cluster layouts including SECS/GEM communication

Applications

  • Glancing angle deposition (GLAD) of nano-structured thin film layers for production of photo-electrodes for efficient fuel generation
  • Infrared-emitters for detection and spectroscopy for gas analyzer and smart applications
  • Metallization of substrates
  • Dielectric coatings
  • Optical coatings

Principle

  • Electron Beam (E-beam) Evaporation

    Current through tungsten filament causes electron emission, which accelerates to an e-beam by high voltage. A magnetic field deflects the e-beam so that it is focused into the crucible. This leads to evaporation of target material and deposition on the substrate.

Technical Data

Substrate size (up to)200 mm dia.
Substrate holderWater-cooled, helium backside cooling contact, substrate rotation 5 to 20 rpm, tiltable in-situ from 0° to 180° in 0.1° steps, optional heating
E-beam evaporator4 to 12 pockets on a cooled crucible
Ion beam source (optional)120 mm circular RF source (RF120-e) or 218 mm circular microwave ECR source (MW218-e)
NeutralizerPlasma bridge neutralizer (N-RF or N3-DC)
Typical deposition ratesNiCr: 16 nm/min, SiO2: 40 nm/min
Uniformity variation≤ 0.3 % (σ/mean)
Base pressure< 5 x 10-8 mbar
System dimension (W x D x H)1.80 m x 1.50 m x 2.40 m, for single chamber with single substrate load-lock (without electrical rack and pumps)
ConfigurationsSingle chamber with single substrate load-lock or cassette handling, Cluster system with up to 3 process chambers
Software interfacesSECS II / GEM, OPC

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Product Flyer scia Eva 200

 

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