High-Quality Cleaning and Qualification up to 3 m in dia. and 3.4 m in length
The scia Clean 1000/1500/3000 systems are used for dry-cleaning of 3-dimensional shaped substrates with weights up to 14 tons. The chamber design and functionality ensures a very good base pressure and allows to quantify even small residual contaminations on the substrate by mass spectroscopy measurement.
Features & Benefits
- Low base pressure and fast pumping due to electropolished and heated vacuum chamber
- Separate substrate heating for improved desorption
- Qualification of residual contamination by high-sensitive mass spectroscopy
- Selectable quantity of plasma sources for advanced cleaning with H2 plasma
- Recipes for repeatable temperature ramps and fully automated cleaning cycles
- Transfer system for loading of heavy substrates
Applications
- Ultra-high purity cleaning of X-ray optics
- Cleaning of components for beam line accelerators
- Outgassing qualification of complex vacuum assemblies
Principle
- Removing of contaminations from 3-dimensional shaped substrates by using ultra-high vacuum (vacuum desorption)
- Further cleaning progress with optional heating of substrate and/or chamber (thermal desorption) and applying plasma treatment
Technologies
Dry-Cleaning allows the removal of substrate surface contaminations in vacuum with different methods. These methods can be applied successively to optimize the cleaning results.
Technical Data
| scia Clean 1000 | scia Clean 1500 | scia Clean 3000 |
Substrate size (up to) | 1000 mm dia., 850 mm length, 500 kg | 1500 mm dia., 1700 mm length, 2 t | 3000 mm dia., 3400 mm length, 14 t |
Substrate heating | Radiation heaters (7.5 kW) up to 250 °C | Radiation heaters (20 kW) up to 250 °C | Radiation heaters (40 kW) up to 250 °C |
Chamber heating | Pressurized wate-based heating up to 150 °C and cooling (16 kW) | Pressurized water-based heating up to 150 °C and cooling (48 kW) | Pressurized water-based heating up to 150 °C and cooling (96 kW) |
Plasma sources | Up to 2 optional ICP plasma sources (PI400), max. 2.5 kW per source | Up to 10 optional ICP plasma sources (PI400), max. 2.5 kW per source | Up to 12 optional ICP plasma sources (PI400), max. 2.5 kW per source |
Base pressure | < 5 x 10-9 mbar | < 5 x 10-8 mbar | < 5 x 10-8 mbar |
Quality control | Mass spectrometer for quantitative outgassing measurement | ||
System dimension (W x D x H) | 1.60 m x 1.80 m x 2.70 m | 8.00 m x 4.20 m x 3.60 m | 15.00 m x 5.50 m x 4.80 m |
Configurations | Single chamber with front door, manual loading with transport wagon | Single chamber with front door, loading via transfer system with transport carriers | |
Software interfaces | SECS II / GEM, OPC | SECS II / GEM, OPC | SECS II / GEM, OPC |
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