High-Quality Cleaning and Qualification up to 3 m in dia. and 3.4 m in length
The scia Clean 1000/1500/3000 systems are used for dry cleaning of 3-dimensional shaped substrates with weights up to 14 tons. The chamber design and functionality ensures a very good base pressure and allows to quantify even small residual contaminations on the substrate by mass spectroscopy measurement.
Features & Benefits
- Low base pressure and fast pumping due to electropolished and heated vacuum chamber
- Separate substrate heating for improved desorption
- Qualification of residual contamination by high-sensitive mass spectroscopy
- Selectable quantity of plasma sources for advanced cleaning with H2 plasma
- Recipes for repeatable temperature ramps and fully automated cleaning cycles
- Transfer system for loading of heavy substrates
Applications
- Ultra-high purity cleaning of X-ray optics
- Cleaning of components for beam line accelerators
- Outgassing qualification of complex vacuum assemblies
Principle
- Removing of contaminations from the 3-dimensional shaped substrates by using ultra-high vacuum (vacuum desorption)
- Further cleaning progress with optional heating of the substrate and/or chamber (thermal desorption) and applying plasma treatment
Technologies
Dry Cleaning allows the removal of substrate surface contaminations in vacuum with different methods. These methods can be applied successively to optimize the cleaning results.
Technical Data
| scia Clean 1000 | scia Clean 1500 | scia Clean 3000 |
Substrate size (up to) | 1000 mm dia., 850 mm length, 500 kg | 1500 mm dia., 1700 mm length, 2 t | 3000 mm dia., 3400 mm length, 14 t |
Substrate heating | Radiation heaters (7.5 kW) up to 250 °C | Radiation heaters (20 kW) up to 250 °C | Radiation heaters (40 kW) up to 250 °C |
Chamber heating | Pressurized wate-based heating up to 150 °C and cooling (16 kW) | Pressurized water-based heating up to 150 °C and cooling (48 kW) | Pressurized water-based heating up to 150 °C and cooling (96 kW) |
Plasma sources | Up to 2 optional ICP plasma sources (PI400), max. 2.5 kW per source | Up to 10 optional ICP plasma sources (PI400), max. 2.5 kW per source | Up to 12 optional ICP plasma sources (PI400), max. 2.5 kW per source |
Base pressure | < 5 x 10-9 mbar | < 5 x 10-8 mbar | < 5 x 10-8 mbar |
Quality control | Mass spectrometer for quantitative outgassing measurement | ||
System dimension (W x D x H) | 1.60 m x 1.80 m x 2.70 m | 8.00 m x 4.20 m x 3.60 m | 15.00 m x 5.50 m x 4.80 m |
Configurations | Single chamber with front door, manual loading with transport wagon | Single chamber with front door, loading via transfer system with transport carriers | |
Software interfaces | SECS II / GEM, OPC | SECS II / GEM, OPC | SECS II / GEM, OPC |
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