scia Trim 200 - Localized film thickness trimming

by Ion Beam Trimming (IBT)

scia Trim 200
scia Trim 200
scia Trim 200 in cluster layout
scia Trim 200 in cluster layout

The scia Trim 200 is designed for high precision film thickness trimming in wafer processing. Typical applications of the system are frequency and thickness trimming in manufacturing of acousto-electrical devices and filters such as bulk acoustic wave (BAW) or surface acoustic wave (SAW) devices, localized pole trimming for thin film heads (TFH) and trimming of precision thin film resistors.

The scia Trim 200 is a high volume production system and accommodates a standard semiconductor cassette handling robot. Cluster tools with two process chambers and two cassette load-locks are available.

Technical Data

Wafer diameter100 mm, 125 mm, 150 mm, 200 mm
Wafer chuckHelium backside thermal contact, mechanical clamping with minimized edge exclusion
Ion Beam SourceIon beam source RF37‑i
NeutralizerHot filament neutralizer N‑Fil or RF plasma bridge neutralizer N-RF
Typical removal rate SiO2: 6.0 x 10-3 mm3/s
Axes performanceMax velocity 0.5 m/s, max. acceleration 15 m/s2
Film variation after trimming< 0.5 nm RMS (dependent on input quality)
Base pressure< 1x 10-6 mbar
System dimensions(W x D x H)1.40 m x 2.80 m x 2.20 m
(without electrical rack and pumps)
Tool configurations1 process chamber, 1 load-lock
2 process chambers, 1 load-lock
2 process chambers, 2 load-locks
Software interfacesSECS II / GEM


  • Focused broad ion beam trimming with a spot size of a few millimeters in diameter
  • Ion beam scans across wafer surface, varying the dwell time to precisely trim the correct amount of material needed at various locations across the wafer
  • Internal control software calculates the corresponding dwell time map and velocity scan profile for each wafer based on individual input data


Principle Ion Beam Trimming

Principle of Ion Beam Trimming by scia Trim 200

More Ion Beam Systems

scia Mill 150
for etching of substrates
up to 150 mm
scia Mill 200
for etching of wafers
up to 200 mm
scia Coat 200
for deposition on wafers
up to 200 mm
scia Coat 500
for deposition on optical substrates
up to 500 mm x 300 mm