Chemnitz, Germany, August 13, 2025. - scia Systems GmbH, an industry leader in advanced ion beam and plasma process equipment for microelectronics, MEMS, and precision optics industries, today announced that Shenzhen Simap Electronic Technology Co., Ltd. has purchased a scia Mill 200. The system will be used for etching trenches and cleaning sidewalls of TSV (through-silicon via) wafers.

“We are pleased that Shenzhen Simap Electronic Technology has chosen ion beam equipment from scia Systems for manufacturing their devices. The system is ideally suited for etching complex structures in a wide range of materials. Furthermore, it’s possible to remove oxide layers and other contaminations from the devices to achieve the requested surface cleanliness,” stated Dr. Michael Zeuner, CEO of scia Systems.

Precise Processing of Complex Surface Structures with scia Mill 200 

Ion Beam Etching (IBE) is a highly precise method for surface processing. A broad beam of positively charged ions is accelerated onto a substrate. The ions transfer their kinetic energy to the surface atoms, causing them to be ejected, thus removing the material. The process is applicable for a wide range of materials, including metals, semiconductors, polymers, and ceramics. Special forms of IBE include reactive ion beam etching (RIBE) and chemically assisted ion beam etching (CAIBE), where reactive gases are utilized to enhance selectivity, influence trench angles, or increase etch rates.

The scia Mill 200 provides high-precision etching of complex multilayer materials with excellent uniformity for wafer sizes up to 200 mm. Typical applications are 2D and 3D structuring of magnetic memory (MRAM), sensors, MEMS, and compound semiconductors.

For more information on the scia Mill 200 system, please visit https://www.scia-systems.com/products/ion-beam-etching/scia-mill-200.