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scia Mill: Strukturierung von komplexen Multilagen auf 300 mm Wafern

Increased wafer-size means lower costs. With our new system, scia Mill 300, you can benefit from all the advantages of ion beam etching on 300 mm wafers, such as excellent accuracy and uniformity, adjustable etch angle and processing of complex multilayers with inert and reactive gases.

Just like the other systems in the scia Mill-series, the scia Mill 300 has a full reactive gas compatibly, which enables reactive etch processes like reactive ion beam etching (RIBE) and chemically assisted ion beam etching (CAIBE). Due to the flexible design, the system is suitable for high-volume and for small scale production.

More information about features and the technical data you can find here: Product Information 

Do you want to know if the scia Mill 300 suits your application? Our sales-team will be happy to help you: Contact us.