scia Cube 300/750 - Large area etching and coating in one system

by Reactive Ion Etching (RIE) and Plasma Enhanced Chemical Vapor Deposition (PECVD)

scia Cube 300
scia Cube 300
scia Cube 750
scia Cube 750

The scia Cube 300/750 are designed for large area high density plasma processes of substrates up to 300 mm x 200 mm (scia Coat 300) and up to 750 mm x 750 mm (scia Coat 750). Typical applications are deposition of Diamond Like Carbon (DLC) for optical filters and dielectric films for anti-reflective coatings as well as etching processes with oxygen or halogen chemistry for the structuring of Semiconductors and metals.

The scia Cube 300/750 combine plasma excitation by an array of microwave sources. The substrate stage is equipped with an independent a RF bias. Various substrate sizes can be transferred with an automatic vacuum load-lock system.

Technical Data

scia Cube 300scia Cube 750

Substrate size

Up to 300 mm x 200 mm

Up to 750 mm x 750 mm

Substrate holder

Water cooled, RF bias

Substrate temperature

Alternatively cryo cooling down to -10°C or heating up to max. 700°C

Alternatively cryo cooling down to -10°C or heating up to max. 850°C

Plasma source

Linear microwave ECR-source PL400 and/or RF parallel plate

Linear microwave ECR-source PL1300 and/or RF parallel plate arrangement

Power supply

MW-Power: max. 9000 W
RF-Power:max. 600 W

MW-Power: max. 48 kW, RF-Power: max. 3 kW

Base Pressure

< 1 x 10-6 mbar

System dimensions (W x D x H)

1.90 m x 1.30 m x 2.20 m (without electrical rack and pumps)

3.70 m x 3.40 m x 2.20 m (without electrical rack, pumps and loading system)

Tool configurations

1 process chamber, 1 load-lock

1 process chamber, 1 loading system, 1 load-lock

Software interface

SECS II / GEM

Product information scia Cube 300

Product information scia Cube 750

Features

  • Large area high density plasma
    process system
  • Independent plasma excitation and RF bias
  • Face-up or face-down substrate orientation
  • In-situ chamber cleaning process with low residues

Applications

PECVD Process

  • Growth of nano-crystalline diamond and carbon nanotubes
  • Dielectric films (SiO2, Si3N4, a:Si, DLC), for optical filters and anti-reflective coatings
  • ZnO as transparent conducting oxide (TCO), for optoelectronics

RIE Process

  • Structuring of Semiconductors and metals
    (e.g. InP, Ni, Cr, Pt, ITO)
  • Structuring of Quartz / Fused Silica
    (CF4 / O2)
  • Ashing of photo resist (O2)

Principle PECVD and RIE

Principle of PECVD and RIE by scia Cube 300/750

More PECVD/RIE Systems

scia Batch 350
for PECVD coating of 3D-substrates