scia Mill 200 - Precise Surface Structuring

for Ion Beam Etching / Milling (IBE / IBM)

scia Mill 200
scia Mill 200
scia Mill 200 cluster layout
scia Mill 200 cluster layout

The scia Mill 200 is designed for highly uniform Ion Beam Etching and Milling of wafers up to 200 mm diameter. Carriers or wafers are loaded via an automatic handling system.

A typical application is structuring of complex multilayers of materials with very low contamination. For that reason a SIMS end point detection system can be integrated for recognition of etched species and a defined etch stop.

The scia Mill 200 can be used for Ion Beam Etching (IBE) with inert gases, Reactive Ion Beam Etching (RIBE) as well as Chemically Assisted Ion Beam Etching (CAIBE). The system can be upgraded for Dual Ion Beam Deposition (DIBD), with an additional ion beam sputter source RF120‑e and a target holder.

Cluster tools for high volume production with three process chambers and two cassette load-locks are available.

Technical Data

Substrate diameter

Up to 200 mm

Substrate Holder

Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 170° in 0.1° steps

Ion Beam Source

Circular RF ion beam source RF350‑e

Neutralizer

Plasma bridge neutralizer N‑RF

Typical removal rates

SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min
Uniformity variation≤ 2.0 %

Base pressure

< 1 x 10-6 mbar
System dimensions (W x D x H)

2.70 m x 1.50 m x 2.40 m (without electrical rack and pumps)

Tool configurations

Single wafer load-lock, Cluster system with cassette handling

Software interfaces

SECS II / GEM

Features

  • Large area Ion Beam Etching
  • IBE with inert gases
  • RIBE and CAIBE with reactive gases
  • Etching under a defined angle
  • Water cooled substrate holder with helium backside cooling contact

Applications

  • Structuring of MEMS, MRAM and sensors
    For example:

  • Structuring of metallic and dielectric multilayers
  • Ion Beam Smoothing
  • Microstructuring
  • Reactive etching of III/V Semiconductors
    (e.g. GaAs, GaN, InP)

Principle Ion Beam Etching

Principle of Ion Beam Etching by scia Mill 200

More Ion Beam Systems

scia Mill 150
for etching of substrates
up to 150 mm
scia Trim 200
for focused trimming of wafers
up to 200 mm
scia Coat 200
for deposition on wafers
up to 200 mm
scia Coat 500
for deposition on optical substrates
up to 500 mm x 300 mm