scia Mill 150 - Precise Surface Structuring
by Ion Beam Milling/Etching (IBM/IBE)
The scia Mill 150 is designed for highly uniform Ion Beam Etching and Milling of single substrates up to 150 mm diameter. Carriers or wafers are loaded via an automatic handling system. The substrate holder has helium backside cooling and can be tilted and rotated. Typical applications are the structuring of metal films for MEMS and sensors.
The scia Mill 150 can be used for Ion Beam Etching (IBE) with inert gases. Additionally the system can be applied for Reactive Ion Beam Etching (RIBE) as well as for Chemically Assisted Ion Beam Etching (CAIBE).
The systems are especially appropriate for research and development and low volume production.
Water cooled, helium backside cooling contact, Substrate rotation 5 to 20 rpm, Tiltable in-situ from 0° till 160° in 0.1° steps
Ion Beam Source
Circular microwave ECR-source MW218‑e
Triple plasma bridge neutralizer N-3DC
Typical removal rates
SiO2: 20 nm/min; TiW: 12 nm/min; Cu: 24 nm/min
|Uniformity variation||≤ 1.0 %|
< 1 x 10-6 mbar
|System dimensions (W x D x H)|
1.70 m x 1.70 m x 1.70 m (without electrical rack)
1 process chamber, 1 load-lock optional
SECS II / GEM